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| CM800HA-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Single IGBTMODTM H-Series Module 800 Amperes/1200 Volts A B U - M4 THD (2 TYP.) R K P E M G B S - M8 THD (2 TYP.) A C E C J G Q T - DIA. (4 TYP.) H L F N E D Description: Powerex IGBTMODTM Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery (135ns) Free-Wheel Diode High Frequency Operation (20-25kHz) Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Laser Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM800HA-24H is a 1200V (VCES), 800 Ampere Single IGBTMODTM Power Module. Type CM Current Rating Amperes 800 VCES Volts (x 50) 24 E C G E Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K Inches 5.12 4.330.01 1.840 Millimeters 130.0 110.00.25 46.75 Dimensions L M N P Q R S T U Inches 0.79 0.77 0.75 0.61 0.51 0.35 M8 Metric 0.26 Dia. M4 Metric Millimeters 20.0 19.5 19.0 15.6 13.0 9.0 M8 Dia. 6.5 M4 1.730.04/0.02 44.01.0/0.5 1.460.04/0.02 37.01.0/0.5 1.42 1.25 1.18 1.10 1.08 36.0 31.8 30.0 28.0 27.5 197 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM800HA-24H Single IGBTMODTM H-Series Module 800 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage Collector Current Peak Collector Current Diode Forward Current Diode Forward Surge Current Power Dissipation Max. Mounting Torque M8 Terminal Screws Max. Mounting Torque M6 Mounting Screws Max. Mounting Torque M4 G-E Terminal Screws Module Weight (Typical) V Isolation * Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating. Symbol Tj Tstg VCES VGES IC ICM IF IFM Pd - - - - VRMS CM800HA-24H -40 to +150 -40 to +125 1200 20 800 1600* 800 1600* 4800 95 26 13 1600 2500 Units C C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb in-lb Grams Volts Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VFM Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 80mA, VCE = 10V IC = 800A, VGE = 15V IC = 800A, VGE = 15V, Tj = 150C Total Gate Charge Diode Forward Voltage VCC = 600V, IC = 800A, VGS = 15V IE = 800A, VGS = 0V Min. - - 4.5 - - - - Typ. - - 6.0 2.7 2.4 4500 - Max. 5.0 0.5 7.5 3.6 - - 3.5 Units mA A Volts Volts Volts nC Volts * Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr IE = 800A, diE/dt = -1600A/s IE = 800A, diE/dt = -1600A/s VCC = 600V, IC = 800A, VGE1 = VGE2 = 15V, RG = 4.2 VGE = 0V, VCE = 10V, f = 1MHz Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 5.9 Max. 180 64 36 500 1200 1000 350 250 - Units nF nF nF ns ns ns ns ns Diode Reverse Recovery Time Diode Reverse Recovery Charge C Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions Per IGBT Per FWDi Per Module, Thermal Grease Applied Min. - - - Typ. - - - Max. 0.026 0.058 0.018 Units C/W C/W C/W 198 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM800HA-24H Single IGBTMODTM H-Series Module 800 Amperes/1200 Volts OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 1600 COLLECTOR CURRENT, IC, (AMPERES) Tj = 25oC VGE = 20V 1600 15 12 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 5 VCE = 10V Tj = 25C Tj = 125C VGE = 15V Tj = 25C Tj = 125C 1200 1200 4 11 3 800 10 800 2 400 7 9 8 400 1 0 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 0 0 400 800 1200 1600 COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 104 Tj = 25C Tj = 25C IC = 1600A EMITTER CURRENT, IE, (AMPERES) CAPACITANCE, Cies, Coes, Cres, (nF) 103 8 103 102 Cies 6 IC = 800A 4 102 Coes 101 2 IC = 320A VGE = 0V f = 1MHz Cres 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 101 0 0.8 1.6 2.4 3.2 4.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 100 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE 104 REVERSE RECOVERY TIME, t rr, (ns) 103 103 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) IC = 800A VCC = 400V 16 SWITCHING TIME, (ns) 103 td(off) t d(on) tf 102 t rr Irr 12 102 VCC = 600V 102 tr VCC = 600V VGE = 15V RG = 4.2 Tj = 125C 8 di/dt = -1600A/sec Tj = 25C 4 101 101 102 COLLECTOR CURRENT IC, (AMPERES) 103 101 101 102 EMITTER CURRENT, IE, (AMPERES) 101 103 0 0 1 2 3 4 5 6 GATE CHARGE, QG, (C) 199 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM800HA-24H Single IGBTMODTM H-Series Module 800 Amperes/1200 Volts NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-3 10-2 10-1 100 101 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 10-2 10-1 100 101 101 100 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.026C/W 100 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.058C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 200 |
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